page:p2 - p 1 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. fe a tures complementary to mmbt5401 ideal for medium power amplification and switching marking : g1 maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ector - ba s e v o l t age v cbo 1 80 v col l ector - emitter v o l t age v ce o 1 60 v emitter - base v o l t a g e v ebo 6 v col l ector cur re n t - conti n u o us i c 0 .6 a col l ector p o w e r dissi p a t i on p c 0.3 w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) p arame t e r s ym bol t es t con diti o ns m in t yp m ax u nit collector - base breakd o w n v o l t age v cbo i c = 10 0 a,i e = 0 180 v c o llect o r - emitter b r e ak d o w n v o l t a g e v ceo i c = 1 ma, i b = 0 160 v emitter - ba s e breakd o w n v o l t age v ebo i e = 1 0 a, i c =0 6 v collector cut - off current i cbo v cb = 120 v , i e =0 50 na emitter cut - off current i eb o v eb = 4 v , i c =0 50 na dc cur r ent gain h fe1 * v ce =5 v , i c = 1ma 80 h fe2 * v ce =5 v , i c = 10ma 100 300 h fe3 * v ce =5 v , i c =50ma 50 collecto r - emitter satu r ation v o l t age v cesat * i c = 10ma, i b = 1 ma 0.15 v i c = 50ma, i b = 5 ma 0.2 ba s e - emitt e r sat u rati o n v o l t a g e v besat * i c = 10ma, i b = 1ma 1 v i c = 50ma, i b = 5ma 1 t r a n s ition fr e qu e n c y f t v ce =10 v ,i c = 1 0 ma,f = 100mhz 100 300 mhz collector output ca p aci t ance c ob v cb =10 v ,i e = 0 , f = 1 mhz 6 p f inp u t ca p aci t ance c ib v be =0.5 v ,i c = 0 ,f= 1 mhz 20 pf noise figure nf v ce = 5 v ,i c = 0 .25ma, f=10hz to 15. 7 khz,rs=1 k ? 8 db *pulse test (npn) 1. base 2. emitter sot - 23 3. collecto MMBT5551
page:p2 - p 2 plastic - encapsulate transistors guangdong hottech industrial co,. ltd. typical characteristics MMBT5551
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